feb.1999 mitsubishi transistor modules QM1000HA-2HB high power switching use insulated type QM1000HA-2HB outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders 145 9 19 28 27 37 28 8 f 6.5 74 39 73 74 65 65 27 9 163 51 47 25 b e bx c e 16 3 16 3 34 3 34 3?4 2?8 45 50max. 47max. 44.5 42 8 b bx e e c label ? i c collector current ...................... 1000a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 mitsubishi transistor modules QM1000HA-2HB high power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m8 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1000 1000 1000 7 1000 1000 7000 50 10000 C40~+150 C40~+125 2500 8.85~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 2100 unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v,emitter open v eb =7v, collector open i c =1000a, i b =1.33a i c =C1000a (diode forward voltage) i c =1000a, v ce =4.0v v cc =600v, i c =1000a, i b1 =2a, Ci b2 =20a transistor part diode part conductive grease applied typ. max. 8.0 8.0 400 4.0 4.2 1.8 2.5 20 7.0 0.018 0.07 0.01
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM1000HA-2HB high power switching use insulated type 1 10 1000 800 600 400 200 0 01 23 4 5 t j =25? i b =250ma i b =1.33a i b =4a i b =0.5a 23457 7 5 4 3 2 7 5 4 3 2 23457 t j =25? t j =125? 4 10 3 10 2 10 2 10 3 10 v ce =4.0v 7 5 4 3 2 7 5 4 3 2 2.2 2.6 3.0 3.4 v ce =4v t j =25? 3.8 4.2 ? 10 0 10 1 10 7 5 4 3 2 7 5 4 3 2 23457 23457 ? 10 v be(sat) v ce(sat) 1 10 0 10 1 10 2 10 3 10 t j =25? t j =125? i b =1.33a ? 10 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 0 10 ? 10 1 10 i c =1000a i c =800a i c =600a 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 3457 2 3457 3 10 2 t on v cc =600v ? b2 =20a i b1 =2a 23 t f t j =25? t j =125? t s
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM1000HA-2HB high power switching use insulated type z th (jCc) ( c/ w) 7 5 4 3 2 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 7 5 3 2 23 57 7 5 3 2 23 23 57 2 10 1 10 0 10 0 10 1 10 t s t f v cc =600v i c =1000a i b1 =2a t j =25? t j =125? ? 10 7 5 3 2 7 5 3 2 7 5 3 2 0.02 0.016 0.012 0.008 0.004 0 23 57 0 10 1 10 ? 10 ? 10 0 10 2400 400 0 0 400 800 1200 200 600 1000 1200 1600 800 2000 t j =125? i b =?0a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 4 10 3 10 2 10 1 10 1ms dc 200? 100? 50? second breakdown area collector dissipation non-repetitive
feb.1999 i rr (a), q rr ( m c) t rr ( m s) transient thermal impedance characteristics (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) z th (jCc) ( c/ w) mitsubishi transistor modules QM1000HA-2HB high power switching use insulated type 7 5 4 3 2 7 5 4 3 2 0 2000 4000 6000 8000 10000 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.04 0.02 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 7 5 4 3 2 7 5 4 3 2 57 2 3457 t j =25? t j =125? t rr i rr q rr 2 10 3 10 ? 10 v cc =600v i b1 =2a ? b2 =20a 2345 7 5 4 3 2 7 5 4 3 2 0 10 1 10 1 10 2 10 3 10 surge collector reverse current Ci csm (a)
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